Search results for " gallium"

showing 10 items of 47 documents

Effects of rapid thermal annealing on the optical properties of low-loss 1.3μm GaInNAs∕GaAs saturable Bragg reflectors

2004

We report studies of the effect of rapid thermal annealing (RTA) on the optical properties of a low-loss 1.3 mum saturable Bragg reflector (SBR), consisting of a GaInNAs/GaAs single quantum well embedded in an AlAs/GaAs Bragg reflector grown monolithically on a GaAs substrate. RTA gives rise to a blueshift of the photoluminescence (PL) peak (and therefore of the excitonic absorption peak) and an enhancement of PL intensity, while the reflectivity properties including peak reflectivity and bandwidth are not degraded. Temperature dependent photoluminescence measurements show that the RTA-induced blueshift of photoluminescence consists of two components: one originating from the increase of op…

:Science::Physics::Optics and light [DRNTU]PhotoluminescenceMaterials scienceCondensed Matter::Otherbusiness.industrychemical beamPhysics::OpticsGeneral Physics and AstronomyNonlinear opticsCondensed Matter::Mesoscopic Systems and Quantum Hall EffectDistributed Bragg reflectorBlueshiftGallium arsenideCondensed Matter::Materials Sciencechemistry.chemical_compoundchemistryOptoelectronicsSemiconducting galliumRapid thermal annealingbusinessSemiconductor quantum wellsRefractive indexQuantum wellJournal of Applied Physics
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A procedure to evaluate the seven parameters of the two-diode model for photovoltaic modules

2019

Abstract The paper presents an analytical procedure to calculate the seven parameters of the two-diode model of photovoltaic (PV) panels for any value of the solar irradiance and cell temperature. Six parameters (the photocurrent, the diode reverse saturation currents, the quality factor of the first diode and the series and shunt resistances), are evaluated by solving the equations related to the properties of the main points of the current-voltage (I-V) characteristics. The further information, necessary to calculate the entire set of seven truly independent parameters, is based on two conditions that have to be simultaneously satisfied: 1) the exclusion of negative values of the model pa…

Amorphous siliconI-V characteristic020209 energySeven-parameter equivalent modelTwo-diode model02 engineering and technologyTopologySolar irradianceMonocrystalline siliconchemistry.chemical_compoundSolar energy0202 electrical engineering electronic engineering information engineering0601 history and archaeologyDiodeMathematicsPhotocurrent060102 archaeologyRenewable Energy Sustainability and the Environmentbusiness.industryPhotovoltaic systemPV panel06 humanities and the artsSolar energyCopper indium gallium selenide solar cellschemistrybusinessRenewable Energy
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An accurate one-diode model suited to represent the current-voltage characteristics of crystalline and thin-film photovoltaic modules

2020

Abstract In this paper a new one-diode model, conceived in order to be used to represent the current-voltage curves of both crystalline and thin-film photovoltaic modules, is presented. The model parameters are calculated from the information contained in the datasheets issued by manufactures by means of simple iterative procedures that do not require the assumption of simplifying hypotheses. Some innovative relations describing the dependence of the parameters from the solar irradiance and cell temperature are adopted in order to permit the model to reliably simulate the electrical behaviour of photovoltaic devices operating in real conditions. The ability of the model to calculate the cur…

Amorphous siliconMaterials scienceSettore ING-IND/11 - Fisica Tecnica Ambientale060102 archaeologyMaximum power principleRenewable Energy Sustainability and the Environment020209 energyPhotovoltaic systemMechanical engineering06 humanities and the arts02 engineering and technologySolar irradianceCopper indium gallium selenide solar cellsPower (physics)Monocrystalline siliconThin-film photovoltaic modules One-diode model Five-parameter model I-V characteristics Solar energychemistry.chemical_compoundchemistry0202 electrical engineering electronic engineering information engineering0601 history and archaeologyDiode
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Argon bubble flow in liquid gallium in external magnetic field

2020

ArgonMaterials sciencechemistryMechanics of MaterialsMechanical EngineeringBubble flowchemistry.chemical_elementElectrical and Electronic EngineeringLiquid galliumAtomic physicsCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsMagnetic fieldInternational Journal of Applied Electromagnetics and Mechanics
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A theoretical investigation on the Cd doping of Cu-depleted CuInSe<inf>2</inf> materials

2011

Because of their outstanding characteristics and affordable price, polycrystalline thin film solar cells based on CuIn 1−x Ga x Se 2 (CIGS) absorber layer have emerged to be one of the most promising materials for photovoltaic applications [1–2]. To further enhance the efficiency of these solar cells much effort is spent on the in-depth investigation of the production methods. However, the effect of structural defects and dopants upon the macroscopic properties and morphology of epitaxially grown CIGS films is not yet fully understood [3]. More importantly, it is well established that the best cells can be prepared by growing the CIGS absorber layer under Cu-poor conditions [4]. Thus, it is…

Atomic layer depositionMaterials scienceDopantChemical physicsVacancy defectDopingNanotechnologyAtomic ratioDensity functional theoryMicrostructureCopper indium gallium selenide solar cells2011 37th IEEE Photovoltaic Specialists Conference
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Laser-induced anisotropy in terbium-gallium garnet

1998

Ga5O12 crystal when illuminated at the terbium ion resonance, becomes optically uniaxial. The optical axis is found to be along the beam-propagation axis. The origin of this symmetry breakdown is a thermal effect. Our observation of a conoscopic pattern is accounted for by a quadratic stress and refractive index distribution model. By spatial integration of the conoscopic pattern, the laser-induced stress birefringence variation as a function of the incident beam power is determined.

BirefringenceMaterials sciencePhysics and Astronomy (miscellaneous)Condensed matter physicsUniaxial crystalbusiness.industryGeneral EngineeringPhysics::OpticsGeneral Physics and Astronomychemistry.chemical_elementTerbiumLaserTerbium gallium garnetlaw.inventionCrystalOptical axischemistry.chemical_compoundOpticschemistrylawbusinessRefractive indexApplied Physics B: Lasers and Optics
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A vacuum cell for obtaining clean surfaces on liquid low melting point metals

1997

Abstract Clean oxide film-free surface of liquid gallium was obtained in a sealed vacuum cell with a glass lid for observation. The cell was evacuated to high vacuum (10 -4 Pa) before admission of liquid and sealing. The surface contamination was about 2–5% of the free area and did not exhibit noticeable increase during several months of storing and employing the cell. The cell described allows observation of surface flows, capillary phenomena and crystallization processes under different conditions.

ChemistryCapillary actionbusiness.industryUltra-high vacuumOxideLow melting pointContaminationCondensed Matter PhysicsSurfaces Coatings and Filmslaw.inventionchemistry.chemical_compoundOpticsChemical engineeringlawCrystallizationLiquid galliumbusinessInstrumentationVacuum
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Identifying the origin of the nonmonotonic thickness dependence of spin-orbit torque and interfacial Dzyaloshinskii-Moriya interaction in a ferrimagn…

2020

Electrical manipulation of magnetism via spin-orbit torques (SOTs) promises efficient spintronic devices. In systems comprising magnetic insulators and heavy metals, SOTs have started to be investigated only recently, especially in systems with interfacial Dzyaloshinskii-Moriya interaction (iDMI). Here, we quantitatively study the SOT efficiency and iDMI in a series of gadolinium gallium garnet (GGG) / thulium iron garnet (TmIG) / platinum (Pt) heterostructures with varying TmIG and Pt thicknesses. We find that the non-monotonic SOT efficiency as a function of the magnetic layer thickness is not consistent with the 1/thickness dependence expected from a simple interfacial SOT mechanism. Mor…

Condensed Matter - Materials ScienceMaterials scienceCondensed matter physicsSpintronics530 PhysicsMagnetismEnergy level splittingMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciencesGadolinium gallium garnetInsulator (electricity)Heterojunction02 engineering and technologyElectron530 Physik021001 nanoscience & nanotechnology01 natural scienceschemistry.chemical_compoundchemistryFerrimagnetismMagnet0103 physical sciences010306 general physics0210 nano-technologySpin orbit torquePhysical Review B
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Gallium-68 and scandium-44 labelled radiotracers based on curcumin structure linked to bifunctional chelators: Synthesis and characterization of pote…

2019

Abstract Curcumin metal complexes showed widespread applications in medicine and can be exploited as a lead structure for developing new tracers for nuclear medicine application. Herein, the synthesis, chemical characterization and radiolabelling with gallium-68 and scandium-44 of two new targeting vectors based on curcumin scaffolds and linked to the chelators 1,4,7-triazacyclononane,1-glutaric acid-4,7-acetic acid (NODAGA) and 1,4-bis(carboxymethyl)-6-[bis(carboxymethyl)]amino-6-methylperhydro-1,4-diazepine (AAZTA) are reported. Synthesis of the precursors could be achieved with a 13% and 11% yield and radiolabelling generally afforded rapid incorporation under mild conditions (>95%). Sta…

CurcuminRadionuclide imagingGallium RadioisotopesPyrazole010402 general chemistry01 natural sciencesBiochemistryInorganic Chemistrychemistry.chemical_compoundMoietyAnimalsHumansTissue DistributionRadioactive TracersBifunctionalDerivatizationPET radiopharmaceuticalsChelating AgentsRadioisotopes010405 organic chemistryGallium-68Combinatorial chemistryIn vitro0104 chemical scienceschemistryYield (chemistry)Positron-Emission TomographyLipophilicityNuclear medicineCurcuminCurcumin; Gallium-68; Nuclear medicine; PET radiopharmaceuticals; Radionuclide imaging; Scandium-44RadiopharmaceuticalsScandium-44Scandium
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Raman scattering and infrared reflectivity in [(InP)5(In0.49Ga0.51As)8]30 superlattices

2000

6 páginas, 6 figuras, 1 tabla.

DiffractionMaterials scienceIII-V semiconductorsInfraredPhononSuperlatticeGeneral Physics and AstronomyReflectivityMolecular physicsSpectral linesymbols.namesakeCondensed Matter::Materials ScienceGallium arsenideIndium compounds:FÍSICA [UNESCO]Interface phononsbusiness.industryIndium compounds ; Gallium arsenide ; III-V semiconductors ; Semiconductor superlattices ; Raman spectra ; Infrared spectra ; Reflectivity ; Interface phonons ; Semiconductor epitaxial layersUNESCO::FÍSICASemiconductor epitaxial layersInfrared spectraCondensed Matter::Mesoscopic Systems and Quantum Hall EffectsymbolsOptoelectronicsRaman spectrabusinessRaman spectroscopySemiconductor superlatticesRaman scatteringMolecular beam epitaxy
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